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1. product pro?le 1.1 general description the BF1210 is a combination of two dual gate mosfet ampli?ers with shared source and gate2 leads. the source and substrate are interconnected. internal bias circuits enable dc stabilization and a very good cross modulation performance during agc. integrated diodes between the gates and source protect against excessive input voltage surges. the transistor has a sot363 micro-miniature plastic package. 1.2 features n two low noise gain controlled ampli?ers in a single package; both with a partly integrated bias n superior cross modulation performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio 1.3 applications n gain controlled low noise ampli?ers for vhf and uhf applications with 5 v supply voltage u digital and analog television tuners u professional communication equipment BF1210 dual n-channel dual gate mosfet rev. 01 25 october 2006 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 2 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. [2] calculated from s-parameters. 2. pinning information 3. ordering information table 1. quick reference data per mosfet unless otherwise speci?ed. symbol parameter conditions min typ max unit v ds drain-source voltage - - 6 v i d drain current dc - - 30 ma p tot total power dissipation t sp 107 c [1] - - 180 mw | y fs | forward transfer admittance ampli?er a; i d =19ma 26 31 41 ms ampli?er b; i d =13ma 28 33 43 ms c iss(g1) input capacitance at gate1 f = 100 mhz [2] ampli?er a - 2.2 2.7 pf ampli?er b - 1.9 2.4 pf c rss reverse transfer capacitance f = 100 mhz [2] -20-ff nf noise ?gure ampli?er a; f = 400 mhz - 0.9 1.5 db ampli?er b; f = 800 mhz - 1.2 1.9 db xmod cross modulation input level for k = 1 % at 40 db agc ampli?er a 100 105 - db m v ampli?er b 100 103 - db m v t j junction temperature - - 150 c table 2. discrete pinning pin description simpli?ed outline symbol 1 gate1 (amp a) 2 gate2 3 gate1 (amp b) 4 drain (amp b) 5 source 6 drain (amp a) 13 2 4 5 6 sym119 amp a da s db g1a g2 g1b amp b table 3. ordering information type number package name description version BF1210 - plastic surface-mounted package; 6 leads sot363
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 3 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 4. marking 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 4. marking type number marking description BF1210 *ab * = p : made in hong kong * = t : made in malaysia * = w : made in china table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage - 6 v i d drain current dc - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 107 c [1] - 180 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 4 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics [1] r g1 connects gate1 to v gg = 5 v. see figure 32 . 8. dynamic characteristics 8.1 dynamic characteristics for ampli?er a table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 240 k/w table 7. static characteristics t j =25 c. symbol parameter conditions min typ max unit per mosfet; unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 m a ampli?er a 6 - - v ampli?er b 6 - - v v (br)g1-ss gate1-source breakdown voltage v g2-s =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v g1-s =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 m a 0.4 - 1.0 v i ds drain-source current v g2-s =4v [1] ampli?er a; v ds(a) =5v; r g1(a) =59k w 14 - 24 ma ampli?er b; v ds(b) =5v; r g1(b) = 150 k w 9 - 17 ma i g1-s gate1 cut-off current v g2-s =0v; v ds(a) =v ds(b) =0v ampli?er a; v g1-s(a) =5v - - 50 na ampli?er b; v g1-s(b) =5v - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v ds(a) =v ds(b) =0v; v g1-s(a) =v g1-s(b) =0v - - 20 na table 8. dynamic characteristics for ampli?er a common source; t amb =25 c; v g2-s =4v; v ds(a) =5v; i d(a) =19ma. symbol parameter conditions min typ max unit | y fs | forward transfer admittance t j =25 c263141ms c iss(g1) input capacitance at gate1 f = 100 mhz [1] - 2.2 2.7 pf c iss(g2) input capacitance at gate2 f = 100 mhz [1] - 3.0 - pf c oss output capacitance f = 100 mhz [1] - 0.9 - pf c rss reverse transfer capacitance f = 100 mhz [1] -20-ff
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 5 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet [1] calculated from s-parameters. [2] measured in figure 32 test circuit. g tr transducer power gain b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s = 2 ms; g l = 0.5 ms 31 35 39 db f = 400 mhz; g s = 2 ms; g l = 1 ms 27 31 35 db f = 800 mhz; g s = 3.3 ms; g l =1ms 22 26 30 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 s - 3 - db f = 400 mhz; y s =y s(opt) - 0.9 1.5 db f = 800 mhz; y s =y s(opt) - 1.2 1.9 db xmod cross modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 90 - db m v at 20 db agc - 99 - db m v at 40 db agc 100 105 - db m v table 8. dynamic characteristics for ampli?er a continued common source; t amb =25 c; v g2-s =4v; v ds(a) =5v; i d(a) =19ma. symbol parameter conditions min typ max unit
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 6 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 8.1.1 graphs for ampli?er a (1) v g2-s = 4.0 v. (2) v g2-s = 3.5 v. (3) v g2-s = 3.0 v. (4) v g2-s = 2.5 v. (5) v g2-s = 2.0 v. (6) v g2-s = 1.5 v. (7) v g2-s = 1.0 v. v ds(a) =5v; t j =25 c. (1) v g1-s(a) = 1.8 v. (2) v g1-s(a) = 1.7 v. (3) v g1-s(a) = 1.6 v. (4) v g1-s(a) = 1.5 v. (5) v g1-s(a) = 1.4 v. (6) v g1-s(a) = 1.3 v. (7) v g1-s(a) = 1.2 v. (8) v g1-s(a) = 1.1 v. (9) v g1-s(a) = 1.0 v. v g2-s =4v; t j =25 c. fig 2. ampli?er a: transfer characteristics; typical values fig 3. ampli?er a: output characteristics; typical values 001aaf476 v g1-s (v) 0 2.0 1.5 0.5 1.0 20 10 30 40 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf477 v ds (v) 06 4 2 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9)
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 7 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet (1) v g2-s = 4.0 v. (2) v g2-s = 3.5 v. (3) v g2-s = 3.0 v. (4) v g2-s = 2.5 v. (5) v g2-s = 2.0 v. (6) v g2-s = 1.5 v. (7) v g2-s = 1.0 v. v ds(a) =5v; t j =25 c. (1) v g2-s = 4.0 v. (2) v g2-s = 3.5 v. (3) v g2-s = 3.0 v. (4) v g2-s = 2.5 v. (5) v g2-s = 2.0 v. (6) v g2-s = 1.5 v. (7) v g2-s = 1.0 v. v ds(a) =5v; t j =25 c. fig 4. ampli?er a: gate1 current as a function of gate1 voltage; typical values fig 5. ampli?er a: forward transfer admittance as a function of drain current; typical values v ds(a) =5v; v g2-s =4v; t j =25 c. v ds(a) =5v;v g2-s =4v;r g1(a) =59k w ;t j =25 c. fig 6. ampli?er a: drain current as a function of gate1 current; typical values fig 7. ampli?er a: drain current as a function of gate1 supply voltage (v gg ); typical values 001aaf478 v g1-s (v) 0 2.0 1.5 0.5 1.0 40 60 20 80 100 i g1 ( m a) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf479 i d (ma) 036 24 12 12 24 36 ? y fs ? (ms) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf480 i g1 ( m a) 060 40 20 8 12 4 16 20 i d (ma) 0 001aaf481 v gg (v) 05 4 23 1 10 5 15 20 i d (ma) 0
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 8 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet (1) r g1(a) =47k w . (2) r g1(a) =59k w . (3) r g1(a) =68k w . (4) r g1(a) =82k w . (5) r g1(a) = 100 k w . (6) r g1(a) = 120 k w . (7) r g1(a) = 150 k w . v g2-s =4v; t j =25 c. (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. t j =25 c; r g1(a) =59k w (connected to v gg ). fig 8. ampli?er a: drain current as a function of v ds and v gg ; typical values fig 9. ampli?er a: drain current as a function of gate2 voltage; typical values 001aaf482 v gg = v ds (v) 05 4 23 1 10 15 5 20 25 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf483 v g2-s (v) 05 4 23 1 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5)
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 9 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet v ds(a) =5v; v gg =5v; i d(nom)(a) =19ma; r g1(a) =59k w ; f = 50 mhz; t amb =25 c; see figure 32 . v ds(a) =5v; v gg =5v; v g2-s(nom) =4v; r g1(a) =59k w ; f w = 50 mhz; f unw = 60 mhz; i d(nom)(a) = 19 ma; t amb =25 c; see figure 32 . fig 10. ampli?er a: typical gain reduction as a function of the agc voltage; typical values fig 11. ampli?er a: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values v ds(a) =5v; v gg =5v; v g2-s(nom) =4v; r g1(a) =59k w ; f = 50 mhz; i d(nom)(a) = 19 ma; t amb =25 c; see figure 32 . fig 12. ampli?er a: typical drain current as a function of gain reduction; typical values 001aaf484 v agc (v) 04 3 12 30 20 40 10 0 gain reduction (db) 50 001aaf485 gain reduction (db) 050 40 20 30 10 90 100 110 v unw (db m v) 80 001aaf486 gain reduction (db) 050 40 20 30 10 10 20 30 i d (ma) 0
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 10 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) = 19 ma. v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) = 19 ma. fig 13. ampli?er a: input admittance as a function of frequency; typical values fig 14. ampli?er a: forward transfer admittance and phase as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) = 19 ma. v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) = 19 ma. fig 15. ampli?er a: reverse transfer admittance and phase as a function of frequency; typical values fig 16. ampli?er a: output admittance as a function of frequency; typical values 001aaf487 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 g is b is 001aaf488 f (mhz) 10 10 3 10 2 - 10 - 10 2 j fs (deg) - 1 10 10 2 ? y fs ? (ms) 1 ? y fs ? j fs 001aaf489 - 10 2 - 10 - 10 3 j rs (deg) 10 2 10 10 3 ? y rs ? ( m s) 1 - 1 f (mhz) 10 10 3 10 2 ? y rs ? j rs 001aaf490 1 10 -1 10 b os , g os (ms) 10 -2 f (mhz) 10 10 3 10 2 b os g os
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 11 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 8.1.2 scattering parameters for ampli?er a 8.2 noise data for ampli?er a 8.3 dynamic characteristics for ampli?er b table 9. scattering parameters for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v;v g1-s(b) =0v; t amb =25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.9861 - 3.2 3.14 176.75 0.00054 87.97 0.9934 - 1.19 100 0.9883 - 7.84 3.14 171.53 0.00104 87.69 0.9925 - 2.85 200 0.9844 - 15.7 3.12 163.1 0.00205 80.77 0.9918 - 5.69 300 0.9761 - 23.52 3.08 154.65 0.00295 76.33 0.9904 - 8.51 400 0.9635 - 31.26 3.03 146.33 0.00375 72.34 0.9888 - 11.33 500 0.9486 - 38.78 2.97 138.15 0.00437 67.97 0.9870 - 14.13 600 0.9305 - 46.2 2.90 130.12 0.00483 64.86 0.9847 - 16.87 700 0.9105 - 53.33 2.81 122.26 0.0051 62.13 0.9832 - 19.61 800 0.8911 - 60.2 2.73 114.65 0.0052 59.88 0.9817 - 22.35 900 0.8723 - 67.03 2.65 107.2 0.00515 58.8 0.9796 - 25.03 1000 0.8521 - 73.74 2.56 99.78 0.00498 58.03 0.9785 - 27.08 table 10. noise data for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma, t amb =25 c; typical values. f (mhz) nf min (db) g opt r n (ratio) (ratio) (deg) 400 0.9 0.749 23.7 0.667 800 1.2 0.688 48.65 0.583 table 11. dynamic characteristics for ampli?er b common source; t amb =25 c; v g2-s =4v; v ds(b) =5v; i d(b) =13ma. symbol parameter conditions min typ max unit | y fs | forward transfer admittance t j =25 c283343ms c iss(g1) input capacitance at gate1 f = 100 mhz [1] - 1.9 2.4 pf c iss(g2) input capacitance at gate2 f = 100 mhz [1] - 3.4 - pf c oss output capacitance f = 100 mhz [1] - 0.85 - pf c rss reverse transfer capacitance f = 100 mhz [1] -20-ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s = 2 ms; g l = 0.5 ms 32 36 40 db f = 400 mhz; g s = 2 ms; g l = 1 ms 29 33 37 db f = 800 mhz; g s = 3.3 ms; g l =1ms 27 31 35 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s =0s - 4 - db f = 400 mhz; y s =y s(opt) - 0.9 1.5 db f = 800 mhz; y s =y s(opt) - 1.2 1.9 db
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 12 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet [1] calculated from s-parameters. [2] measured in figure 32 test circuit. 8.3.1 graphs for ampli?er b xmod cross modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 88 - db m v at 20 db agc - 94 - db m v at 40 db agc 100 103 - db m v table 11. dynamic characteristics for ampli?er b continued common source; t amb =25 c; v g2-s =4v; v ds(b) =5v; i d(b) =13ma. symbol parameter conditions min typ max unit (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; t j =25 c. (1) v g1-s(b) = 1.6 v. (2) v g1-s(b) = 1.5 v. (3) v g1-s(b) = 1.4 v. (4) v g1-s(b) = 1.3 v. (5) v g1-s(b) = 1.2 v. (6) v g1-s(b) = 1.1 v. (7) v g1-s(b) = 1.0 v. v g2-s =4v; t j =25 c. fig 17. ampli?er b: transfer characteristics; typical values fig 18. ampli?er b: output characteristics; typical values 001aaf491 v g1-s (v) 0 2.0 1.5 0.5 1.0 20 30 10 40 50 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf492 v ds (v) 06 4 2 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7)
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 13 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; t j =25 c. (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; t j =25 c. fig 19. ampli?er b: gate1 current as a function of gate1 voltage; typical values fig 20. ampli?er b: forward transfer admittance as a function of drain current; typical values v ds(b) =5v; v g2-s =4v; t j =25 c. v ds(b) =5v; v g2-s =4v; r g1(b) = 150 k w ; t j =25 c. fig 21. ampli?er b: drain current as a function of gate1 current; typical values fig 22. ampli?er b: drain voltage as a function of gate1 supply voltage (v gg ); typical values 001aaf493 v g1-s (v) 0 2.0 1.5 0.5 1.0 80 40 120 160 i g1 ( m a) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf494 i d (ma) 048 36 12 24 24 12 36 48 ? y fs ? (ms) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf495 i g1 ( m a) 050 40 20 30 10 8 16 24 i d (ma) 0 001aaf496 v gg (v) 05 4 23 1 8 4 12 16 i d (ma) 0
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 14 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet (1) r g1(b) =68k w . (2) r g1(b) =82k w . (3) r g1(b) = 100 k w . (4) r g1(b) = 120 k w . (5) r g1(b) = 150 k w . (6) r g1(b) = 180 k w . (7) r g1(b) = 220 k w . v g2-s =5v; r g1(b) connected to v gg ; t j =25 c. (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. r g1(b) = 150 k w ; t j =25 c. fig 23. ampli?er b: drain current as a function of v ds and v gg ; typical values fig 24. ampli?er b: drain current as a function of gate2 voltage; typical values 001aaf497 v gg = v ds (v) 05 4 23 1 10 15 5 20 25 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) 001aaf498 v g2-s (v) 05 4 23 1 8 4 12 16 i d (ma) 0 (1) (2) (3) (4) (5)
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 15 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet v ds(b) =5v; v g2-s(nom) =4v; r g1(b) = 150 k w ; i d(nom)(b) = 13 ma; t amb =25 c; see figure 32 . v ds(b) =5v; v g2-s(nom) =4v; r g1(b) = 150 k w ; i d(nom)(b) = 13 ma; f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 32 . fig 25. ampli?er b: typical gain reduction as a function of the agc voltage; typical values fig 26. ampli?er b: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values v ds(b) =v gg =5v; v g2-s(nom) =4v; r g1(b) = 150 k w ; i d(nom)(b) = 13 ma; f = 50 mhz; t amb =25 c; see figure 32 . fig 27. ampli?er b: typical drain current as a function of gain reduction; typical values 001aaf499 v agc (v) 04 3 12 40 20 0 gain reduction (db) 60 001aaf500 gain reduction (db) 050 40 20 30 10 95 100 90 105 110 v unw (db m v) 85 001aaf501 gain reduction (db) 050 40 20 30 10 6 9 3 12 15 i d (ma) 0
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 16 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet v ds(b) =5v; v g2-s =4v; v ds(a) =0v; i d(b) = 13 ma. v ds(b) =5v; v g2-s =4v; v ds(a) =0v; i d(b) = 13 ma. fig 28. ampli?er b: input admittance as a function of frequency; typical values fig 29. ampli?er b: forward transfer admittance and phase as a function of frequency; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =0v; i d(b) = 13 ma. v ds(b) =5v; v g2-s =4v; v ds(a) =0v; i d(b) = 13 ma. fig 30. ampli?er b: reverse transfer admittance and phase as a function of frequency; typical values fig 31. ampli?er b: output admittance as a function of frequency; typical values 001aaf502 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 g is b is 001aaf503 f (mhz) 10 10 3 10 2 - 10 - 10 2 j fs (deg) - 1 10 10 2 ? y fs ? (ms) 1 ? y fs ? j fs 001aaf504 10 2 10 10 3 j rs (deg) 1 f (mhz) 10 10 3 10 2 ? y rs ? j rs 10 2 10 10 3 ? y rs ? (ms) 1 001aaf505 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 17 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 8.3.2 scattering parameters for ampli?er b 8.4 noise data for ampli?er b 9. test information table 12. scattering parameters for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 13 ma; v ds(a) =0v;v g1-s(a) =0v; t amb =25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.9874 - 2.79 3.41 177.08 0.00054 89.27 0.992 - 1.26 100 0.9883 - 6.8 3.41 172.57 0.00113 90.81 0.9900 - 2.91 200 0.9844 - 13.52 3.39 165.23 0.00224 89.67 0.9897 - 5.81 300 0.9777 - 20.2 3.36 157.88 0.00336 89.02 0.9889 - 8.7 400 0.9684 - 26.83 3.32 150.6 0.00447 88.43 0.9881 - 11.61 500 0.9578 - 33.32 3.27 143.38 0.0055 87.64 0.9870 - 14.52 600 0.9442 - 39.8 3.21 136.22 0.00649 87.53 0.9851 - 17.39 700 0.9291 - 46.08 3.16 129.15 0.00741 87.51 0.9838 - 20.3 800 0.9147 - 52.18 3.08 122.25 0.00828 87.7 0.9825 - 23.2 900 0.9002 - 58.35 3.08 115.4 0.00914 88.14 0.9803 - 26.06 1000 0.8836 - 64.49 2.93 108.49 0.00997 88.26 0.9789 - 29.03 table 13. noise data for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 13 ma, t amb =25 c; typical values. f (mhz) nf min (db) g opt r n (ratio) (ratio) (deg) 400 0.9 0.743 20.27 0.65 800 1.2 0.687 42.08 0.581 fig 32. cross modulation test setup (for one mosfet) 001aad926 r1 10 k w r l 50 w l1 ? 2.2 m h r gen 50 w v i r2 50 w r g1 c1 4.7 nf c2 4.7 nf c3 4.7 nf c4 4.7 nf v agc v gg dut v ds
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 18 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 10. package outline fig 33. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 19 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 11. abbreviations 12. revision history table 14. abbreviations acronym description agc automatic gain control dc direct current mosfet metal-oxide-semiconductor field-effect transistor uhf ultra high frequency vhf very high frequency table 15. revision history document id release date data sheet status change notice supersedes BF1210_1 20061025 product data sheet - -
BF1210_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 25 october 2006 20 of 21 nxp semiconductors BF1210 dual n-channel dual gate mosfet 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BF1210 dual n-channel dual gate mosfet ? nxp b.v. 2006. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 25 october 2006 document identifier: BF1210_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 4 8.1 dynamic characteristics for ampli?er a. . . . . . . 4 8.1.1 graphs for ampli?er a . . . . . . . . . . . . . . . . . . . . 6 8.1.2 scattering parameters for ampli?er a . . . . . . . 11 8.2 noise data for ampli?er a . . . . . . . . . . . . . . . . 11 8.3 dynamic characteristics for ampli?er b. . . . . . 11 8.3.1 graphs for ampli?er b . . . . . . . . . . . . . . . . . . . 12 8.3.2 scattering parameters for ampli?er b . . . . . . . 17 8.4 noise data for ampli?er b . . . . . . . . . . . . . . . . 17 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 17 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 18 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 19 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 20 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 14 contact information. . . . . . . . . . . . . . . . . . . . . 20 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

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